论文标题
无定形NBSI膜中的电子玻璃效应
Electron glass effects in amorphous NbSi films
论文作者
论文摘要
我们报告了非平衡场效应在绝缘具有不同NB含量和厚度的无定形NBSI薄膜中。电子玻璃的标志是，在从室温到4.2 K的冷却后，在所有薄膜中都观察到了电导与栅极电压曲线的记忆倾角的对数生长。尽管发现记忆倾角的宽度与膜参数有很大变化，这在无定形的氧化二膜膜中也观察到，但动力学的筛选长度和温度依赖性更接近于在粒状Al膜中观察到的内容。我们的结果表明，连续和不连续系统之间的区别与了解电子玻璃特征中各种系统之间报告的差异无关。相反，我们建议它们不是基本的性质，并且源于每种材料中所使用的方案的差异和电气不均匀性长度尺度的差异。
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.
