论文标题
Landau的金属绝缘体过渡理论vo $ _ \ text {2} $用金属离子掺杂
Landau theory of metal-insulator transition in VO$_\text{2}$ doped with metal ions
论文作者
论文摘要
金属离子掺杂可以有效地调节$ \ mathrm {vo} _2 $中的金属 - 绝缘体过渡温度。实验发现，五价和六价离子掺杂大大降低了过渡温度，而三价离子掺杂会增加过渡温度并诱导中间相。基于我们先前开发的$ \ mathrm {vo} _2 $中的金属 - 绝缘体过渡的相位模型，我们为金属掺杂的$ \ mathrm {vo} _2 $制定了Landau的潜力。金属离子掺杂对晶格结构的影响以现象学方式解释。使用Landau电位，我们计算了$ \ Mathrm {vo} _2 $与实验一致的各种金属离子掺杂的$ \ mathrm {vo} _2 $的温度浓度 - 浓度相图，并为不同金属离子掺杂的不同行为提供了解释。现象学理论可以提供$ \ mathrm {vo} _2 $掺入其他金属离子的相图的估计。
Metal-ion doping can effectively regulate the metal-insulator transition temperature in $\mathrm{VO}_2$. Experiments found that the pentavalent and hexavalent ion doping dramatically reduces the transition temperature while the trivalent ion doping increases the transition temperature and induces intermediate phases. Based on the phase-field model of the metal-insulator transition in $\mathrm{VO}_2$ we developed previously, we formulate a Landau potential of the metal-ion-doped $\mathrm{VO}_2$ taking account of the effects of doping on the electron correlation and lattice structure. The effect of metal-ion doping on the lattice structure is accounted for in a phenomenological way. Using the Landau potential, we calculate the temperature-dopant-concentration phase diagrams of $\mathrm{VO}_2$ doped with various metal ions consistent with the experiments and provide explanation to the different behaviors of different metal-ion doping. The phenomenological theory can provide estimations of phase diagrams of $\mathrm{VO}_2$ doped with other metal ions.
