论文标题

单层谷谷半导体中的Landau量化激光吸收和发光

Landau-quantized excitonic absorption and luminescence in a monolayer valley semiconductor

论文作者

Liu, Erfu, van Baren, Jeremiah, Taniguchi, Takashi, Watanabe, Kenji, Chang, Yia-Chung, Lui, Chun Hung

论文摘要

我们研究了磁场下的单层WSE $ _2 $的Landau量化的激光吸收和发光。我们观察到明亮的激子和Trions(或激子 - 核酸元)以及黑色Trions及其声子复制品中的Gate依赖性量子振荡。我们的结果表明,旋转和谷极化的Landau水平(LLS),其中填充因子$ n = +0, +1 $在底部传导带中,$ n = -0 $ n = -0 $至$ -6 $,包括浆果生育诱导的$ n = \ pm0 $ lls of Massive Dirac Fermions。 LL填充在激子能量移位中产生周期性的高原,并伴有激子吸收宽度和幅度的急剧振荡。可以通过半经验计算来模拟这种特殊的激子行为。传统带(G〜2.5)和价带(G〜15)的实验推导的G因子超过了单粒子模型中预测的(分别为g = 1.5、5.5)。这种G因素增强性意味着封闭的单层WSE $ _2 $中的多体相互作用。 Landau量化,激子效应和多体相互作用之间的复杂相互作用使单层WSE $ _2 $成为探索新型相关量子现象的有前途的平台。

We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe$_2$ under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton-polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors $n = +0, +1$ in the bottom conduction band and $n = -0$ to $-6$ in the top valence band, including the Berry-curvature-induced $n = \pm0$ LLs of massive Dirac fermions. The LL filling produces periodic plateaus in the exciton energy shift accompanied by sharp oscillations in the exciton absorption width and magnitude. This peculiar exciton behavior can be simulated by semi-empirical calculations. The experimentally deduced g-factors of the conduction band (g ~ 2.5) and valence band (g ~ 15) exceed those predicted in a single-particle model (g = 1.5, 5.5, respectively). Such g-factor enhancement implies strong many-body interactions in gated monolayer WSe$_2$. The complex interplay between Landau quantization, excitonic effects, and many-body interactions makes monolayer WSe$_2$ a promising platform to explore novel correlated quantum phenomena.

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