论文标题
通过溅射沉积生长的LANIO3薄膜的LANIO3薄膜研究
A laser-ARPES study of LaNiO3 thin films grown by sputter deposition
论文作者
论文摘要
相关的过渡金属氧化物LANIO $ _3 $的薄膜会在厚度减小到几个单位单元时进行金属 - 绝缘体过渡。在这里，我们使用角度分辨的光发射光谱研究在一系列的外延环lanio $ _3 $厚度的厚度范围为19至2 U.C.中。由RF磁铁溅射原位生长。我们的数据显示，由于厚度降低到5 U.C.这可以防止系统在电子上变得二维，正如我们实验中看到的很大程度上不变的费米表面所证实的那样。在绝缘状态下，我们观察到对相干准颗粒峰的强烈抑制，但没有明显的间隙。这些功能类似于对NDNIO $ _3 $绝缘状态的先前观察。
Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the electronic structure across this transition in a series of epitaxial LaNiO$_3$ films of thicknesses ranging from 19 to 2 u.c. grown in situ by RF magnetron sputtering. Our data show a strong reduction of the electronic mean free path as the thickness is reduced below 5 u.c. This prevents the system from becoming electronically two-dimensional, as confirmed by the largely unchanged Fermi surface seen in our experiments. In the insulating state we observe a strong suppression of the coherent quasiparticle peak but no clear gap. These features resemble previous observations of the insulating state of NdNiO$_3$.
