论文标题
连贯的操纵与共振激发和单发射器在4H碳化硅中创建氮空位中心
Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
论文作者
论文摘要
硅碳化物（SIC）由于能够托管具有光学可寻址的旋转量子和晶圆大小的样品的能力，因此已成为实现可扩展量子技术的关键参与者。在这里，我们已经证明了具有共振激发的光学检测到的磁共振（ODMR），并清楚地鉴定了4H-SIC中NV中心的基态能级。 Rabi和Ramsey振荡已经实现了SIC中NV中心的相干操纵。最后，我们显示了使用离子植入的SIC中单氮空位（NV）中心的成功产生和表征。我们的结果强调了NV中心在SIC中的关键作用，作为量子信息处理的潜在候选者。
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing.
