论文标题
在不对称耦合GE/SIGE量子井的传统带中的sub子带过渡工程
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
论文作者
论文摘要
：N型GE/SIGE不对称耦合量子井代表了各种纳米级量子设备的基础，其中包括最近提出的基于硅的THZ THZ量子级联激光器的设计。在本文中，我们将结构和光谱实验结合在20模块的上层建筑上，每个实验都具有两个通过GE富含GE的隧道屏障耦合的GE井，这是设计的几何参数和P掺杂浓度的函数。通过将THZ光谱数据与subband光学吸收共振的数值计算进行比较，我们证明了在异质结构的传导束中的量子限制子带的能量和空间重叠。样品的高结构/界面质量以及子带杂交时实现的控制是朝着电动电动发光装置的有希望的起点。
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometry parameters of the design and the P dopant concentration. Through the comparison of THz spectroscopic data with numerical calculations of intersubband optical absorption resonances, we demonstrated that it is possible to tune by design the energy and the spatial overlap of quantum confined subbands in the conduction band of the heterostructures. The high structural/interface quality of the samples and the control achieved on subband hybridization are the promising starting point towards a working electrically pumped light-emitting device.
