论文标题
在$ batio_3 $的情况下以2 nm域周期性的形成和操纵无接触电极的域周期性
Formation and manipulation of domain walls with 2-nm domain periodicity in $BaTiO_3$ without contact electrodes
论文作者
论文摘要
氧化物材料中二维极限的界面表现出丰富的功能跨度，与大体行为明显不同。在此类界面中，铁电的域壁引起了特别的注意，因为它们可以通过外部电压确定性地移动，而它们在拆下电压后仍保持位置，为新型神经形态和低功率数据处理技术铺平了道路。遵循基特尔缩放定律遵循材料厚度的释放菌株出现了铁族结构域。因此，一个主要的障碍是减少给定厚度的设备足迹，即形成和移动高密度域壁。在这里，我们使用传输电子显微镜在不使用触点电极的情况下生产高达2 nm的域壁，同时观察其形成和动态，以$ batio_3 $。展示了工程域墙的大区域覆盖范围。发现域壁密度随着有效应力的增加而增加，直到到达饱和值，反映了150倍的有效应力增强。超过该值会导致域壁旋转释放应变。除了揭示这种多尺度应变释放机制外，我们还提供了一种设备设计，该设计允许以2 nm周期性控制域壁，反映了潜在的$ 144-TB/英寸/英寸^2 $神经形态网络。
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can be moved deterministically with external voltage, while they remain at place after voltage removal, paving the way to novel neuromorphic and low-power data-processing technologies. Ferroic domains arise to release strain, which depends on material thickness, following Kittel scaling law. Hence, a major hurdle is to reduce the device footprint for a given thickness, i.e., to form and move high-density domain walls. Here, we used transmission electron microscopy to produce domain walls with periodicity as high as 2 nm without the use of contact electrodes, while observing their formation and dynamics in situ in $BaTiO_3$. Large-area coverage of the engineered domain walls was demonstrated. The domain-wall density was found to increase with increasing effective stress, until arriving to a saturation value that reflects 150-fold effective stress enhancement. Exceeding this value resulted in strain release by domain-wall rotation. In addition to revealing this multiscale strain-releasing mechanism, we offer a device design that allows controllable switching of domain-walls with 2-nm periodicity, reflecting a potential $144-Tb/inch^2$ neuromorphic network.
