论文标题
无定形钼硅薄膜中的传输机制
Transport mechanism in amorphous molybdenum silicide thin films
论文作者
论文摘要
无定形钼硅化合物对潜在的设备应用引起了重大兴趣，尤其是在单光子检测器中。在这项工作中，测量了依赖温度的电阻和磁性抗性行为以揭示电荷运输机制，这对于应用非常重要，但仍然不足。发现Mott变量跳动电导率主导着溅射的无定形钼硅化薄膜的运输。此外，观察到的磁性抗性跨界从负到正极归因于干扰增强和电子波函数的收缩，这两者都会改变局部位点之间跳跃的可能性。
Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured to reveal the charge transport mechanism, which is of great importance for applications but is still insufficient. It is found that Mott variable hopping conductivity dominates the transport of sputtered amorphous molybdenum silicide thin films. Additionally, the observed magneto-resistance crossover from negative to positive is ascribed to the interference enhancement and the shrinkage of electron wave function, both of which vary the probability of hopping between localized sites.
