论文标题
等离子增强界面电荷传输转移激子的2D面内侧面和范德华的MOS $ _2 $/WS $ _2 $异质结构
Plasmon-Enhanced Interface Charge Transfer Exciton of 2D In-Plane Lateral and van Der Waals MoS$_2$/WS$_2$ Heterostructures
论文作者
论文摘要
组合第一原理计算和有限元电磁模拟的多尺度计算方法用于研究2D侧向和范德WAALS MOS2/WS2异质结构的等离子体增强层间层中镀膜转移（ICT）ICCITON，具有2H相。在2H侧面观察到弱的ICT激子，而Van der Waals MOS $ _2 $/WS $ _2 $异质结构。理论结果揭示了血浆和ICT激子之间的强耦合产生的丛集的物理原理。金属等离子体可以强烈增强弱的CT激子，可以提供一种观察弱CT激子的新方法。我们的结果可以促进对侧面和范德华异质结构的等离子体和激子之间强烈的耦合相互作用而产生的对丛的更深入的理解。
The multi-scale computational method of combining first-principles calculation and finite element electromagnetic simulations is used to study plasmon-enhanced interlayer charge transfer (ICT) exciton of 2D lateral and van der Waals MoS2/WS2 heterostructure with 2H phase. The weak ICT excitons are observed in the 2H lateral and van der Waals MoS$_2$/WS$_2$ heterostructures. Theoretical results reveal the physical principle of plexciton resulting from strong coupling between plasmonic and ICT exciton. The weak CT exciton can be strongly enhanced by metal plasmon, can provide a new way to observe the weak CT exciton. Our results can promote deeper understanding of the plexciton resulting from strong coupling interaction between plasmon and exciton of lateral and van der Waals heterostructures.
