论文标题
使用2D negf形式主义的基于物理的基于物理的数值模型
An Improved Physics Based Numerical Model of Tunnel FET Using 2D NEGF Formalism
论文作者
论文摘要
在这项工作中，我们研究了基于2频段模型的带对波段隧道的2D模型，并使用2D NEGF形式主义实施了它。本质上是2D，该模型更好地解决了在大多数实用的TFET设备结构中发生的隧穿过程方向性的变化。它还可以作为TFET的半古典和多量量子模拟之间的折衷。在这项工作中，我们已经逐步介绍了数值模型的数学发展。我们还讨论了如何在模拟器中实现此模型，并指出了一些优化，以减少复杂性和节省时间。最后，我们为实用的TFET设计进行了精心设计的模拟，并将结果与市售的TCAD模拟进行了比较，以指出经常使用的简单模型的局限性，以及我们的模型如何克服这些限制。
In this work, we have investigated a 2D model of band-to-band tunneling based on 2-band model and implemented it using 2D NEGF formalism. Being 2D in nature, this model better addresses the variation in the directionality of the tunneling process occurring in most practical TFET device structures. It also works as a compromise between semi-classical and multiband quantum simulation of TFETs. In this work, we have presented a sound step by step mathematical development of the numerical model. We have also discussed how this model can be implemented in simulators and pointed out a few optimizations that can be made to reduce complexity and to save time. Finally, we have performed elaborate simulations for a practical TFET design and compared the results with commercially available TCAD simulations, to point out the limitations of the simplistic models that are frequently used, and how our model overcomes these limitations.
