论文标题
未来移动混合记忆系统的硬件内存管理
Hardware Memory Management for Future Mobile Hybrid Memory Systems
论文作者
论文摘要
当前的移动应用程序具有迅速增长的内存足迹,对内存系统设计构成了巨大的挑战。不足的DRAM主内存将在内存和存储之间频繁地进行数据交换,这一过程会损害性能,消耗能量并恶化典型的闪存存储设备的写入耐力。或者,较大的DRAM具有更高的泄漏功率,并更快地排出电池。此外,由于成本,DRAM缩放趋势使手机空间的越来越多。新兴的非易失性记忆(NVM)有可能减轻这些问题,因为其每成本的容量要高于DRAM和MINI-MAL静态功率。最近,已经出现了广泛的NVM技术,包括相变记忆(PCM),Memristor和3D Xpoint。尽管有上述优势,但与戏剧NVM的写入相比,NVM具有更长的访问延迟,可以产生更高的潜伏期和磨损成本。因此,将这些新的内存技术集成在内存层次结构中需要对传统系统设计的基本进行重新搜索。在这项工作中,我们提出了一个硬件加速内存管理器(HMMU),该内存在平坦的空间地址空间中解决两种类型的内存。我们在此内存管理器中设计了一组数据放置和数据迁移策略,以便我们可以利用每种内存技术的优势。通过使用此HMMU增强系统,我们减少了整体记忆潜伏期,同时还将写入为NVM。实验结果表明,我们的设计可降低39%的能源消耗,仅12%的性能降解与将来可能难以站不住脚的全DRAM基线相比。
The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts performance, consumes energy and deteriorates the write endurance of typical flash storage devices. Alternately, a larger DRAM has higher leakage power and drains the battery faster. Further, DRAM scaling trends make further growth of DRAMin the mobile space prohibitive due to cost. Emerging non-volatile memory (NVM) has the potential to alleviate these issues due to its higher capacity per cost than DRAM and mini-mal static power. Recently, a wide spectrum of NVM technologies, including phase-change memories (PCM), memristor, and 3D XPoint have emerged. Despite the mentioned advantages, NVM has longer access latency compared to DRAMand NVM writes can incur higher latencies and wear costs. Therefore integration of these new memory technologies in the memory hierarchy requires a fundamental rearchitect-ing of traditional system designs. In this work, we propose a hardware-accelerated memory manager (HMMU) that addresses both types of memory in a flat space address space. We design a set of data placement and data migration policies within this memory manager, such that we may exploit the advantages of each memory technology. By augmenting the system with this HMMU, we reduce the overall memory latency while also reducing writes to the NVM. Experimental results show that our design achieves a 39% reduction in energy consumption with only a 12% performance degradation versus an all-DRAM baseline that is likely untenable in the future.