论文标题
观察对称性保护的零模式
Observation of symmetry protected zero modes in topolectrical circuits
论文作者
论文摘要
高阶拓扑绝缘子是物质的一类新的拓扑阶段,最初是为固体中的电子构想的。有人建议,$ \ mathbb {z} _n $贝里阶段(将浆果相量化为$2π/n $)是表征对称性受保护的拓扑状态的有用工具,而实验证据仍然难以捉摸。最近,面向电路已经成为一个简单但功能强大的平台,用于研究在凝结物质系统中挑战的拓扑物理学。在这里,我们介绍了以$ \ mathbb {z} _3 $ berry阶段为特征的二阶角状态的第一个实验性观察。我们在理论上和实验上证明了局部二阶拓扑状态受到三方晶格的普遍手性对称性的保护,并将它们固定在“零能量”中。通过在电路中的sublattices中引入额外的电容器,我们能够检查零模式与手性对称和破坏干扰的稳健性。我们的工作为通过电路实验测试外来拓扑带理论铺平了道路。
Higher-order topological insulators are a new class of topological phases of matter, originally conceived for electrons in solids. It has been suggested that $\mathbb{Z}_N$ Berry phase (Berry phase quantized into $2π/N$) is a useful tool to characterize the symmetry protected topological states, while the experimental evidence is still elusive. Recently, topolectrical circuits have emerged as a simple yet very powerful platform for studying topological physics that are challenging to realize in condensed matter systems. Here, we present the first experimental observation of second-order corner states characterized by $\mathbb{Z}_3$ Berry phase in topolectrical circuits. We demonstrate theoretically and experimentally that the localized second-order topological states are protected by a generalized chiral symmetry of tripartite lattices, and they are pinned to "zero energy". By introducing extra capacitors within sublattices in the circuit, we are able to examine the robustness of the zero modes against both chiral-symmetry conserving and breaking disturbances. Our work paves the way for testing exotic topological band theory by electrical-circuit experiments.