论文标题
核心壳半导体 - 流体 - 流体绝缘子量子点的光学跨带性能由$θ$ - 电子动力学描述
Optical intersubband properties of a core-shell semiconductor-topological insulator quantum dot described by $θ$-Electrodynamics
论文作者
论文摘要
当系统处于均匀的外部磁场下时,分析了由核心壳GAAS量子点组成的球形拓扑绝缘体的光学特性。拓扑绝缘体的磁电响应是在$θ$ - 电子动力学的有效框架中计算出来的,它允许通过Green的功能方法对诱导的电和磁力的分析计算。 GAAS Hamiltonian是在有效的质量近似中构建的,其相应的Schrödinger方程是通过Lagrange-Mesh方法数值求解的。我们计算非线性迭代密度矩阵形式主义给出的总吸收系数和折射率变化,高达三阶。我们的结果表明,磁电材料的存在会导致新的偶极过渡,否则不允许。同样,与垂直极化相比,当入射光极化与外部磁场平行时,发现光子吸收的增强。此外,当增加$θ$参数的值时,我们报告了光学功能的明显蓝移。这些结果对于与QED高结构常数$α$成比例的磁电化性率的间接实验量可能很有用。
The optical properties of a spherical topological insulator embedded concentrically in a single-electron system consisting of a core-shell GaAs quantum dot are analyzed, when the system is under a uniform external magnetic field. The topological insulator's magnetoelectric response is computed in the effective framework of $θ$-electrodynamics, which allows analytical calculations for the induced electric and magnetic potentials by Green's Function method. The GaAs Hamiltonian is constructed in the effective-mass approximation, and its corresponding Schrödinger equation is numerically solved through the Lagrange-mesh method. We compute the total absorption coefficients and refractive index changes given by the non-linear iterative density matrix formalism up to third order. Our results show that the presence of the magnetoelectric material causes new dipolar transitions otherwise not allowed. Also, an enhancement of the photon absorption is found when the incident light polarization is oriented parallel to the external magnetic field, in comparison with perpendicular polarization. Moreover, we report an appreciable blue shift in the optical functions when the values of the $θ$-parameter are increased. These results can be useful for indirect experimental measures of the magnetoelectric polarizability which is proportional to the QED fine-structure constant $α$.