论文标题
缺陷工程引起的单个厚SRRUO3层中的拓扑厅效应
Topological Hall effect in single thick SrRuO3 layers induced by defect engineering
论文作者
论文摘要
拓扑厅效应（The）已在超薄SRRUO3（SRO）膜中发现，其中SRO层和另一个氧化物层之间的界面破坏了反转对称性，从而导致出现。因此，唯一发生在几个单位细胞的超薄SRO膜中。除了采用异质结构外，反转对称性还可以通过引入缺陷在散装SRO中本质上折断。在这项研究中，在60 nm厚的SRO膜中观察到，其中氦离子辐射引入了缺陷和晶格畸变。辐照的SRO膜在5 K到80 K的宽温度范围内表现出明显的。这些观察结果可以归因于Dzyaloshinskii-Moriya相互作用的出现，这是由于与Lattice缺陷工程相关的人造反转对称性破坏。可以通过原位膜加工来实现氧化物单层中氧化物单层的创建和控制。因此，这项工作提供了对该工作的新见解，并说明了设计新型SpinTronics设备的有希望的策略。
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.
