论文标题
通过横向电流对边缘等离子体的无阈值激发
Thresholdless excitation of edge plasmons by transverse current
论文作者
论文摘要
从理论上讲，我们表明直流电子越过二维电子系统的连接会导致边缘磁体细胞激发。这种等离子体激发的阈值电流不取决于接触效应，并将弹道电子系统的接触效果零接近，这与众所周知的Dyakonov-Shur和Cerenkov-type的不稳定性具有很强的区别。我们从直流电流和电子散射引起的损失估计等离子能量增益。我们表明，基于GAAS的异质结构在$ t \ Lessim 200 $ K和磁场$ b \ Lessim 10 $ t中是可行的。
We theoretically demonstrate that dc electron flow across the junction of two-dimensional electron systems leads to excitation of edge magnetoplasmons. The threshold current for such plasmon excitation does not depend on contact effects and approaches zero for ballistic electron systems, which makes a strong distinction from the well-known Dyakonov-Shur and Cerenkov-type instabilities. We estimate the competing plasmon energy gain from dc current and loss due to electron scattering. We show that plasmon self excitation is feasible in GaAs-based heterostructures at $T\lesssim 200$ K and magnetic fields $B \lesssim 10$ T.
