论文标题
Al上的3x3排序硅层的电子结构（111）
Electronic structure of a 3x3-ordered silicon layer on Al(111)
论文作者
论文摘要
AL（111）上硅（Si）层的3x3有序阶段的电子结构已通过角度分辨光发射光谱（ARPES）技术使用同步辐射进行了研究，并通过试验原子模型对其进行建模。确定了源自线性分散带的封闭的费米表面。蜂窝硅在Al（111）上的试验原子模型的带结构计算意味着金属频带源自具有DIRAC锥样分散曲线的Al-Si杂种状态。 Al（111）上的SI层可以是Xene的模型系统，可以通过覆盖物 - 基底相互作用实现无质量电子系统。
Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.
