论文标题

石墨烯中巨型伪磁场,山谷极化和拓扑通道的纳米级应变工程

Nanoscale Strain Engineering of Giant Pseudo-Magnetic Fields, Valley Polarization and Topological Channels in Graphene

论文作者

Hsu, C. -C., Teague, M. L., Wang, J. -Q., Yeh, N. -C.

论文摘要

与石墨烯中两个与两个不相等山谷相关的非平凡浆果阶段的存在为研究山谷注射的拓扑状态提供了有趣的机会。此类研究的例子包括观察单层石墨烯中异常的量子霍尔效应,通过扫描隧道显微镜组装的分子石墨烯中拓扑零模式的演示以及在石墨烯超晶石中的拓扑山谷传输的检测或在双层层石墨烯域中。但是,所有上述实验均涉及机械剥落的薄片或原子原子结构的不可缩放方法。在这里,我们报告了一种通过室温下通过纳米级应变工程来操纵单层石墨烯中拓扑状态的方法。通过将无应变的单层石墨烯放在构造的纳米结构上以诱导全局反转对称性破裂,我们证明了巨型伪磁场(最高800个特斯拉),山谷极化和循环一维拓扑通道的质量图形图形的构建图形,从而朝着杂物图式的图形上,因此,将其定期传播。

The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of anomalous quantum Hall effect in monolayer graphene, demonstration of topological zero modes in molecular graphene assembled by scanning tunneling microscopy, and detection of topological valley transport either in graphene superlattices or at bilayer graphene domain walls. However, all aforementioned experiments involved non-scalable approaches of either mechanically exfoliated flakes or atom-by-atom constructions. Here we report an approach to manipulating the topological states in monolayer graphene via nanoscale strain engineering at room temperature. By placing strain-free monolayer graphene on architected nanostructures to induce global inversion symmetry breaking, we demonstrate the development of giant pseudo-magnetic fields (up to 800 Tesla), valley polarization, and periodic one-dimensional topological channels for protected propagation of chiral modes in strained graphene, thus paving a pathway towards scalable graphene-based valleytronics.

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