论文标题
CVD生长石墨烯中的分数量子厅效应
Fractional quantum Hall effect in CVD-grown graphene
论文作者
论文摘要
我们显示了分数量子大厅状态在干燥的化学蒸气沉积（CVD）中的出现，这些石墨烯会衍生成从3 t到35 t的磁场中组装到异质结构中。有效的复合纤维化填充因子最多可见且高阶组合量的flux firta atta flux Quanta（flux Quanta），最多可见$ n $ $。我们的结果表明，CVD生长石墨烯的量子迁移率与去角质石墨烯的量子迁移率相当，更具体地说，$ p/3 $分数量子霍尔状态具有高达30 K的能量，与基于剥落的石墨烯基于其他硅门控设备中观察到的能量差异相当。
We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.
