论文标题
通过电容光谱测定INAS二维电子系统中$ G $ -FACTOR的确定
Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy
论文作者
论文摘要
我们使用基于电容光谱的新方法确定了二维电子气（2DEG）的有效$ G $ -FACTOR（$ | G^\ ast | $）。在平面磁场中测量的INAS/ALGASB量子井中2DEG的电容 - 电压曲线显示出一个双步特征，这表明子带边缘的Zeeman分裂。该方法允许同时且独立地确定$ | g^\ ast | $和有效的质量$ m^\ ast $。数据表明，INAS层中的双轴拉伸应变对$ m^\ ast $和$ g^\ ast $都有相当大的影响。我们的方法提供了一种确定$ | g^\ ast | $的方法，该| $是常用巧合技术的补充。
We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an in-plane magnetic field shows a double-step feature that indicates the Zeeman splitting of the subband edge. The method allows for simultaneous and independent determination of $|g^\ast|$ and effective mass $m^\ast$. Data suggest that the biaxial tensile strain in the InAs layer has considerable impacts on both $m^\ast$ and $g^\ast$. Our method provides a means to determine $|g^\ast|$ that is complementary to the commonly used coincidence technique.
