论文标题
在不同温度下的硅光电倍增体性能的研究
Study of Silicon Photomultiplier Performance at Different Temperatures
论文作者
论文摘要
降低硅光化器（SIPM）的操作温度会导致其黑暗噪声下降。一些实验将冷温视为SIPM低噪声应用的一种选择。其中之一是TAO检测器，该检测器需要在$ t \ -50〜^\ circe $ c时操作。据报道，SIPM对不同温度的光子检测效率（PDE）的显着依赖性在此温度周围急剧下降。在本文中，我们介绍了来自Hamamatsu和Advansid（FBK）公司的两个sipms样本的性能研究。没有观察到PDE的显着差异。
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at $T\approx -50~^\circ$C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.
