论文标题
二维Beta-In2se3光电探测器的晶圆尺度制造
Wafer-scale fabrication of two-dimensional beta-In2Se3 photodetectors
论文作者
论文摘要
二维（2D）$β-In_2se_3 $材料的外延生长是使用分子束外尾（MBE）在2英寸C-Sapphire晶圆上获得的。通过X射线衍射（XRD），拉曼光谱法和异常校正后的扫描传输电子显微镜（AC-STEM）确认，厚（90 nm）和非常薄的膜（非常薄的膜），低至两个五五倍层（2 nm）。使用光刻和其他标准半导体加工方法生产基于五个五五倍层的光电探测器的晶状尺度制造。光电探测器的响应性为3 mA/w，峰值比检测率（D*）为$ 10^9 $琼斯，外部量子效率（EQE）在550 nm时为0.67％，响应时间约为7 ms，比以前报告的任何结果都快于$β-In_2se_3 $ photodectors。从光电流测量值中，观察到1.38 eV的光带隙。这些结果是关于2D $ in_2se_3 $的晶圆尺度沉积，以及其在光电设备中的制造，提供了丢失的链接，该链接将使2D材料的商业化。
The epitaxial growth of two-dimensional (2D) $β-In_2Se_3$ material was obtained over 2-inches c-sapphire wafers using molecular beam epitaxy (MBE). Excellent quality of thick (90 nm) and very thin films, down to two quintuple layers (2 nm), was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and aberration-corrected scanning transmission electron microscopy (ac-STEM). Wafer-scale fabrication of photodetectors based on five quintuple layers was produced using photolithography and other standard semiconductor processing methods. The photodetectors exhibit responsivity of 3 mA/W, peak specific detectivity (D*) of $10^9$ Jones, external quantum efficiency (EQE) of 0.67 % at 550 nm, and response-time of ~7 ms, which is faster than any result previously reported for $β-In_2Se_3$ photodetectors. From the photocurrent measurements, an optical bandgap of 1.38 eV was observed. These results on wafer-scale deposition of 2D $In_2Se_3$, as well as its fabrication into optoelectronic devices provide the missing link that will enable the commercialization of 2D materials.
