论文标题
Y功能方法的准确性，用于在不同技术的参数提取二维FET的参数
Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies
论文作者
论文摘要
在此评估了固有迁移率降解的影响，使用\ textIt {y}功能提取的二维场效应晶体管的接触电阻值的准确性。考虑到这一因素并忽略它的方法之间的差异通过对用于每种提取的传输模型的近似值进行详细分析来指出。与经常使用的方法相反，考虑到更完整的传输模型产生与其他复杂方法获得的参考值相似的基于固有的迁移率降低的方法，基于更完整的触点电阻值的基于\ textIt {y} - 功能的方法。后一个值更适合描述不同技术的二维设备的实验数据。二维晶体管的固有迁移率降解因子首次进行了实验表征，并对其对设备性能的影响进行了描述和评估。
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a \textit{Y}-function-based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of two dimensional devices of different technologies. The intrinsic mobility degradation factor of two-dimensional transistors is experimentally characterized for the first time and its impact on the device performance is described and evaluated.
