论文标题
量子键分布中快速门控雪崩光电二极管的反弹
Backflashes in fast-gated avalanche photodiodes in quantum key distribution
论文作者
论文摘要
Ingaas单光雪崩光电二极管(APD)是高位速率量子键分布的关键推动因素。但是,此类探测器与理想模型的偏差可以为窃听器(夏娃)开放侧向通道以利用。反弹的现象,即APD在检测光子后重生光子,使夏娃有机会被动地学习检测到的光子所携带的信息,而无需与合法接收器Bob积极互动。尽管在慢速门控探测器中观察到了这一点,但尚未在快速门控的APD中进行调查,因为它被认为会降低这种效果。在这里,我们执行第一个实验,以使用信息泄漏度量来表征Backflashes在GHz门控的自我差异APD中提供的安全威胁。我们发现,实际上,信息泄漏低于较慢的门控探测器所报告的信息,并且我们表明其对安全密钥速率的影响可以忽略不计。我们还将反弹事件的速率与APD暗电流相关联,从而表明它们的起源是APD中的INP乘法区域。
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The phenomenon of backflashes, whereby APDs reemit photons after detecting a photon, gives Eve the opportunity to passively learn the information carried by the detected photon without the need to actively interact with the legitimate receiver, Bob. Whilst this has been observed in slow-gated detectors, it has not been investigated in fast-gated APDs where it has been posited that this effect would be lessened. Here, we perform the first experiment to characterise the security threat that backflashes provide in a GHz-gated self-differencing APD using the metric of information leakage. We find that, indeed, the information leakage is lower than that reported for slower-gated detectors and we show that its effect on the secure key rate is negligible. We also relate the rate of backflash events to the APD dark current, thereby suggesting their origin is the InP multiplication region in the APD.