论文标题
共掺杂的ZnO纳米棒中的光学性质和载体动力学
Optical properties and carrier dynamics in Co-doped ZnO nanorods
论文作者
论文摘要
据报道,通过过渡金属掺杂的ZnO纳米棒的电子特性受控修饰。化学浴生长在生长溶液中通过化学浴生长从0到20个原子%合成了一系列ZnO纳米棒。使用阴极发光,时间分辨的发光,瞬时吸光度光谱和入射光子到电流转换效率(IPCE)探测光电行为。分析表明表面缺陷在确定电子行为中的关键作用。值得注意的是,共同兴奋剂将纳米棒的光吸收扩展到可见的区域,增加表面缺陷,缩短非辐射寿命,同时留下辐射性寿命常数。此外,对于1个原子%共同掺杂ZnO纳米棒的IPCE。这些结果表明,掺杂可以控制地调整ZnO纳米棒的功能电子性能。
The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.