论文标题
超高有效的自旋轨道扭矩磁力化切换在全置拓扑绝缘子中-Ferromagnet多层
Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers
论文作者
论文摘要
具有较大垂直磁各向异性的铁磁体的自旋轨道扭矩（SOT）磁化切换具有下一代非挥发性磁磁性随机访问（MRAM）的巨大潜力。它需要具有较大旋转厅角和高电导率的高性能纯自旋电流源，可以通过质量生产技术制造。在这项工作中，我们证明了全置bisb拓扑绝缘子的超高有效且可靠的SOT磁化切换 - 垂直磁化的CO/PT多层。尽管由行业友好的木磁铁溅射而不是实验室分子束外延制造，但拓扑绝缘子层BISB显示了一个$θ$$ _ {sh} $ = 12.3的大型旋转厅角度，高电导率和$σ$ = 1.5x $ 10^5^5 $ $ $ $ $ $ $ $ ph^$ $ = $}的高电导率。我们的结果表明，BISB拓扑绝缘子在实施超低功率SOT-MRAM和其他基于SOT的Spintronic设备方面具有质量生产能力。
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high-performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in all-sputtered BiSb topological insulator - perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the industry-friendly magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of $θ$$_{SH}$ = 12.3 and high electrical conductivity of $σ$ = 1.5x$10^5$ $Ω^{-1}$m$^{-1}$. Our results demonstrate the mass production capability of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices.
