论文标题
拓扑结节半含量CACDSN的磁转移特性
Magnetotransport properties of the topological nodal-line semimetal CaCdSn
论文作者
论文摘要
拓扑结节线半学支持受保护的带横梁,这些横梁在价和传导带之间形成淋巴结线或淋巴结环,并展示新的运输现象。在这里,我们介绍了节点线半准候选材料CACDSN的拓扑状态,并报告其通过自流量方法生长的单晶的磁转移特性。我们的第一原理计算表明,在没有自旋轨道耦合(SOC)效应的情况下,CACDSN的电子结构在$γ$点附近具有单个节点环。发现CACDSN中的淋巴结横梁位于费米水平以上,并产生由电子和孔口袋组成的费米表面。 CACDSN表现出较高的移动性($μ\ 3.44 \ times 10^4 $ cm $^2 $ v $^{ - 1} $ s $^{ - 1} $),并显示出野外诱导的金属 - 触发器,例如在低温下具有电阻的高原。我们在低温下观察到一个极大的和准线性的非饱和横向以及纵向磁倍率(MR)($ \ \ \ \ times 10^3 \%$和$ \ $ \ $ \ y $ \ y $ \ y $ \ oble $ \ obs)$ \ y \ \ \ \ \ \ \多于1.71 $ $,分别为4k)。我们还简要讨论了如此大的准磁磁性及其与CACDSN的非平凡带结构的联系背后的可能原因。
Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material, CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the $Γ$ point in the absence of spin-orbit coupling (SOC) effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility ($μ\approx 3.44\times 10^4$ cm$^2$V$^{-1}$s$^{-1}$) and displays a field-induced metal-semiconductor like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear non-saturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures ($\approx 7.44\times 10^3 \%$ and $\approx 1.71\times 10^3\%$, respectively, at 4K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.