论文标题

带隙重归其化,载体迁移率和晶状萘中的电子波自能力

Band gap renormalization, carrier mobilities, and the electron-phonon self-energy in crystalline naphthalene

论文作者

Brown-Altvater, Florian, Antonius, Gabriel, Rangel, Tonatiuh, Giantomassi, Matteo, Draxl, Claudia, Gonze, Xavier, Louie, Steven G., Neaton, Jeffrey B.

论文摘要

有机分子晶体有望具有可观的电子 - 光子相互作用,这些相互作用在零和有限温度下影响其电子特性。在这项工作中,我们报告了第一原理的计算以及对萘晶体中电子音波自我能源的分析。我们计算基本带隙的零点重新归一化和温度依赖性,以及使用密度功能理论的价值和传导带附近的电子状态的散射寿命。此外,我们计算出的对$ GW $校正的准粒子带结构的声子重归其化预测,在室温下,萘的基本带隙为5 eV,与实验非常吻合。从计算出的声子诱导的电子寿命中,我们获得了电子和孔的温度依赖性迁移率,与室温下的实验测量非常吻合。最后,我们表明,电子 - phonon自我能量能量的近似能量自洽的计算方案导致电子带结构中强卫星带的预测。我们发现,自我能力的单个计算可以重现萘带隙重新归一化和电气迁移率的自洽结果,前提是使用在裸露的特征值中评估自我能源的质量壳近似。

Organic molecular crystals are expected to feature appreciable electron-phonon interactions that influence their electronic properties at zero and finite temperature. In this work, we report first-principles calculations and an analysis of the electron-phonon self-energy in naphthalene crystals. We compute the zero-point renormalization and temperature dependence of the fundamental band gap, and the resulting scattering lifetimes of electronic states near the valence- and conduction-band edges employing density functional theory. Further, our calculated phonon renormalization of the $GW$-corrected quasiparticle band structure predicts a fundamental band gap of 5 eV for naphthalene at room temperature, in good agreement with experiments. From our calculated phonon-induced electron lifetimes, we obtain the temperature-dependent mobilities of electrons and holes in good agreement with experimental measurements at room temperatures. Finally, we show that an approximate energy self-consistent computational scheme for the electron-phonon self-energy leads to the prediction of strong satellite bands in the electronic band structure. We find that a single calculation of the self-energy can reproduce the self-consistent results of the band gap renormalization and electrical mobilities for naphthalene, provided that the on-the-mass-shell approximation is used, i.e., if the self-energy is evaluated at the bare eigenvalues.

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