论文标题

在拓扑设计的GNR中收取本地化并跳跃

Charge Localization and Hopping in a Topologically Engineered GNR

论文作者

Junior, Marcelo Lopes Pereira, Neto, Pedro Henrique de Oliveira, Filho, Demetrio Antonio da Silva, de Sousa, Leonardo Evaristo, Silva, Geraldo Magela e, Junior, Luiz Antonio Ribeiro

论文摘要

石墨烯纳米容器(GNR)是具有各种技术应用的有前途的二维材料,尤其是具有半导体特征的扶手椅GNR家族。最近,已经开发了允许控制GNR拓扑的方法,从而产生由两个不同的扶手椅GNR家族(7和9-agnrs)组成的纳米管,这些纳米骨的产生。该GNR显示了两个拓扑带,它们位于价和传导带之间,可有效调节纳米替比带。在这里,我们采用了Su-Schrieffer-Heeger模型的二维扩展,以在中性和带电状态下研究该新材料的形态和电子特性。结果表明,该系统中的电荷注入会导致形成的极化子,这些极子严格将其定位在系统的9-AGNRS段中,并且该系统的迁移率严重受到系统拓扑的损害。我们进一步显示了极化子的位移,该层子位移是在系统的9个AGNR部分之间跳跃,这表明了该材料中电荷传输的这种机制。

Graphene nanoribbons (GNRs) are promising two-dimensional materials with various technological applications, in particular for the armchair GNR families that have a semiconductor character. Recently, methods that allowed for the control of GNR's topology have been developed, resulting in the production of nanoribbons composed of alternating segments of two distinct armchair GNR families (7 and 9-AGNRs) connected in heterojunctions. This GNR displays two topological bands that lie between the valence and conduction bands that effectively modulates the nanoribbon bandgap. Here, we employ a two-dimensional extension of the Su-Schrieffer-Heeger model to study morphological and electronic properties of this new material in both neutral and charged states. Results demonstrate that charge injection in this system results in the formation of polarons that localize strictly in the 9-AGNRs segments of the system and whose mobility is highly impaired by the system's topology. We further show polaron displacement by means of hopping between 9-AGNR portions of the system, suggesting this mechanism for charge transport in this material.

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