论文标题
关于铁掺杂的β-GA2O3散装晶体的红色发光的起源
On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
论文作者
论文摘要
当前，在〜10^18 cm-3范围内的Fe掺杂是产生半绝制单晶β-GA2O3底物的最广泛可用的方法。 Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commercial substrates consisting of two sharp peaks at 689 nm and 697 nm superimposed on a broader peak centered at 710 nm originates from Cr impurities present at a浓度接近2 ppm。红色发射表现出两倍的对称性，在吸收边缘的激发强度的峰值似乎在较高的激发能以GA2O3发射竞争，并且在FE存在下似乎会加剧。基于极化吸收，发光观测和Tanabe-Sugano图分析，我们提出了在β-GA2O3矩阵中光生载体的谐振能量转移到八面体配位的CR3+以产生红色发光，以产生红色的发光，可能还会通过Fe3+敏感。
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commercial substrates consisting of two sharp peaks at 689 nm and 697 nm superimposed on a broader peak centered at 710 nm originates from Cr impurities present at a concentration near 2 ppm. The red emission exhibits two-fold symmetry, peaks in intensity for excitation near absorption edge, seems to compete with Ga2O3 emission at higher excitation energy and appears to be intensified in the presence of Fe. Based on polarized absorption, luminescence observations and Tanabe-Sugano diagram analysis, we propose a resonant energy transfer of photogenerated carriers in beta-Ga2O3 matrix to octahedrally-coordinated Cr3+ to give red luminescence, possibly also sensitized by Fe3+.
