论文标题
金属/半导体量子环中的温度依赖性磁磁性转换
Temperature dependent diamagnetic-paramagnetic transitions in metal/semiconductor quantum rings
论文作者
论文摘要
我们介绍了薄量子环中依赖温度依赖性磁磁性磁盘转变的理论研究。我们的研究表明，金属/半导体环的磁敏感性可以在中间和高温下表现出多个符号翻转，具体取决于环中的传导电子数量（$ n $）以及是否包括自旋效应。当温度从绝对零升高时，易感性开始在特征温度上方翻转符号，该温度与$ n^{ - 1} $或$ n^{ - 1/2} $相反的电子数量，取决于$ n \，\ Mathrm {mod {mod {mod} \，4 $ 4 $，根据$ n \ n \ n \ n \ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ n $ $ n $。在低温和高温限制中的敏感性得出了分析结果，明确显示了对环居里常数的自旋影响。
We present theoretical studies of temperature dependent diamagnetic-paramagnetic transitions in thin quantum rings. Our studies show that the magnetic susceptibility of metal/semiconductor rings can exhibit multiple sign flips at intermediate and high temperatures depending on the number of conduction electrons in the ring ($N$) and whether or not spin effects are included. When the temperature is increased from absolute zero, the susceptibility begins to flip sign above a characteristic temperature that scales inversely with the number of electrons according to $N^{-1}$ or $N^{-1/2}$, depending on the presence of spin effects and the value of $N\,\mathrm{mod}\,4$. Analytical results are derived for the susceptibility in the low and high temperature limits, explicitly showing the spin effects on the ring Curie constant.
