论文标题
弹道墙的光刻超导式量子设备
Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices
论文作者
论文摘要
拓扑Qubit的实现要求采用先进的技术来轻松，可重复的工程师在半导体纳米线中引起的超导性。在这里，我们基于阴影墙引入了片上制造范式，该范围可在设备质量和可重复性方面取得重大进展。它允许实施新颖的量子设备和最终的拓扑量子，同时消除了许多制造步骤，例如光刻和蚀刻。这对于保留脆弱杂交界面的完整性和均匀性至关重要。该方法简化了用硬引起的超导差距和弹道正常/超导体连接的可再现设备的可再现制造。大栅极可调的超电流和高阶多重多Andreev反射表现出所得的纳米线约瑟夫森交界处的特殊连贯性。我们的方法尤其可以实现3末端设备，其中零偏置电导峰在磁场中同时在一维杂种的两个边界处出现。
The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits while eliminating many fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables, in particular, the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.
