论文标题
状态的密度和SISF连接中的电流 - 电压特性
Density of states and current-voltage characteristics in SIsFS junctions
论文作者
论文摘要
我们研究了超导在约瑟夫森SISF连接处的状态密度（DOS）与复杂的层中的连接，由绝缘体I和铁磁金属F之间的薄超导间隔者组成。该考虑集中在跨隧道障碍物中的局部密度上，并允许均允许进行这种允许的特征，并构成了当前的特征。我们研究了接近效应和Zeeman分裂对系统特性的影响，并发现具有非散布DOS的显着亚间隙区域。我们还发现在薄s层中DOS的行为中，0- $π$过渡的表现。这些特性导致I-V曲线上出现新的特征特征，这些特征提供了有关连接内部电子状态的其他信息。
We study the density of states (DOS) inside superconducting Josephson SIsFS junctions with complex interlayer consisting of a thin superconducting spacer 's' between insulator I and a ferromagnetic metal F. The consideration is focused on the local density of states in the vicinity of a tunnel barrier, and it permits to estimate the current-voltage characteristics in the resistive state of such junctions. We study the influence of the proximity effect and Zeeman splitting on the properties of the system, and we find significant sub-gap regions with non-vanishing DOS. We also find manifestations of the 0-$π$ transition in the behavior of DOS in a thin s-layer. These properties lead to appearance of new characteristic features on I-V curves which provide additional information about electronic states inside the junction.
