论文标题

BACU2AS2的新型多态性相:通量对新相生长中新相形成的影响

Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth

论文作者

Wu, Hanlin, Li, Sheng, Wu, Zheng, Wang, Xiqu, Ofenstein, Gareth A., Kwon, Sunah, Kim, Moon J., Chu, Paul C. W., Lv, Bing

论文摘要

在这项工作中,我们彻底研究了通量组成和温度对BACU2AS2化合物晶体生长的影响。 PB和CUAS自通料产生众所周知的α相THCR2SI2型结构(Z = 2),这是BacU2AS2(\ B {eta}相)的新的多态相(\ b {eta}相),具有更大的C层次参数(z = 10),可以通过THCR2SI2SI2SI2SI2SI2SI2SI2SI2-exe2-eNTEPTER(z = 10)进行。 生长。我们通过单晶X射线衍射,透射电子显微镜(TEM)和扫描透射电子显微镜(STEM)研究来表征这种结构。此外,我们将这种新的多态性间生间结构与α相BACU2AS2(THCR2SI2类型为z = 2)和\ b {eta} -phase bacu2sb2(thcr2si2和cabe2ge2类型具有z = 6)的生长,均与同一空间I4/mmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmmm。电运输研究显示,在5 K时,在5 K和7 T的磁场下,P型载体和磁倍率高达22%。我们的工作提出了一种新的途径,可以通过材料合成期间通过通量和温度控制发现新的多态性结构。

In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z=2), a new polymorphic phase of BaCu2As2 (\b{eta} phase) with a much larger c lattice parameter (Z=10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth. We have characterized this structure through single-crystal X-ray diffraction, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) studies. Furthermore, we compare this new polymorphic intergrowth structure with the α-phase BaCu2As2 (ThCr2Si2 type with Z=2) and the \b{eta}-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types with Z=6), both with the same space group I4/mmm. Electrical transport studies reveal p-type carriers and magnetoresistivity up to 22% at 5 K and under a magnetic field of 7 T. Our work suggests a new route for the discovery of new polymorphic structures through flux and temperature control during material synthesis.

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