论文标题
一个纳米厚通道和铁电控门的二键锡氧化物晶体管
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
论文作者
论文摘要
在这项工作中，我们展示了高性能依赖性丁基氧化物（ITO）晶体管，其通道厚度降至1 nm，而铁电HF0.5ZR0.5O2作为栅极介电。在通道厚度为1 nm的次级微米栅极长度ITO晶体管上实现了0.243 A/mm的电流，而当通道厚度增加到2 nm时，其通道厚度为1 nm。使用厚度为10 nm的凸起的源/排水结构，导致低接触电阻为0.15Ωmm，低接触电阻率为1.1 {\ times}10-7ΩCM2。 The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation形成，以及低功率后端（BEOL）CMOS应用程序的大型带隙。
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ωmm and a low contact resistivity of 1.1{\times}10-7 Ωcm2. The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application.
