论文标题
在轴突绝缘子候选euin2AS2的抗铁磁相中的带反转的签名
Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2
论文作者
论文摘要
我们已经在EUIN2AS2上进行了角度分辨的光发射光谱，该光谱光谱被预测为抗磁磁状态的轴突绝缘子。通过利用软X射线和真空 - 硫酸盐光子，我们揭示了一个三维的孔袋，以散装布鲁因区域的伽马点为中心，以及在顺磁性相位的孔掺杂的表面状态。进入抗铁磁相后，条带结构表现出明显的重建，其特征在于费米水平附近的“ M”形散装带的出现。与第一原理的定性一致性计算的定性一致性表明，在抗铁磁阶段的伽马点发生了散装波段倒置。我们建议EUIN2AS2提供了一个很好的机会，可以研究与可能的轴突 - 绝缘体相有关的外来量子阶段。
We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.
