论文标题

从2D铁磁绝缘子到超薄MNBI2TE4

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

论文作者

Trang, Chi Xuan, Li, Qile, Yin, Yuefeng, Hwang, Jinwoong, Akhgar, Golrokh, Di Bernardo, Iolanda, Grubišić-Čabo, Antonija, Tadich, Anton, Fuhrer, Michael S., Mo, Sung- Kwan, Medhekar, Nikhil, Edmonds, Mark T.

论文摘要

固有的磁性拓扑绝缘子为在较高温度下运行的稳健磁性拓扑相提供了低障碍和较大的磁性带镜。通过控制层厚度,已经实现了新兴现象,例如量子异常霍尔(QAH)效应和轴突绝缘子阶段。这些观察结果在温度明显低于大量MNBI2TE4的Neel温度下发生,并且尚未实现超薄MNBI2TE4中DIRAC点的磁能隙的测量。实现该系统的承诺至关重要的是对层依赖性能隙的直接测量,并验证隙是否在QAH相中是磁性的。在这里,我们利用依赖温度的角度分辨光谱光谱来研究外延超细MNBI2TE4。我们直接观察到一个隔离式元件的2D铁磁绝缘子,一个隔ap层大于780 meV的层互换,到一个隔层层(1 sl)到QAH绝缘子,在3和5 SL MNBI2TE4的8 k和5 k的QAH绝缘子。 QAH差距被确认为磁性具有磁性,因为它突然降低了温度以上的温度。在QAH阶段,直接观察到QAH MNBI2TE4的QAH阶段的较大磁能间隙有望进一步升高QAH材料的工作温度。

Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials.

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