论文标题
探索不同离子通量状态对CVD种植石墨烯光学和表面电子性质的影响
Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene
论文作者
论文摘要
在这项工作中，已经研究了离子通量依赖性缺陷形成对石墨烯表面电子和光学特性的修饰的影响。沉积的化学蒸气（CVD）石墨烯在不同的频率下用快速重离子（SHI）（70 MEV SI+5）束照射，以研究缺陷形成机制及其在调节其表面电子特性（例如工作功能）中的作用。在低离子剂量下，观察到通过空位创造的受体掺杂。而密集的电子激发主导的扩展缺陷是在较高剂量下实现的，随后将晶石墨烯转化为无定形碳。 UV-VIS光谱，拉曼光谱和扫描开尔文探针显微镜（SKPM）的结果支持了这一事实。因此，探索了在SHI辐照下的石墨烯转化的新途径，即离子剂量可能是实现石墨烯中几种影响的主要因素。
In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the defect formation mechanism and the role of it in modulating its surface electronic property such as work function. At low ion dose, acceptor doping via vacancy creation was observed; whereas dense electronic excitation dominated extended defects was realized at higher dose, which subsequently transforms the crystalline graphene into amorphous carbon. The results from UV-Vis spectroscopy, Raman spectroscopy and scanning Kelvin probe microscopy (SKPM) support the fact. Thus a new pathway of transformation of graphene under SHI irradiation was explored where ion dose could be the main factor to realize several effects in graphene.
