论文标题
半空间配置中的集体免费电子激发
Collective Free Electron Excitations in Half-Space Configuration
论文作者
论文摘要
当前的研究提出了一个在环境jellium样正背景下的半空间等离子体激励的创新模型。线性化的schrödinger-poisson系统用于得出有效的耦合伪配合和二阶差分方程的抑制伪型系统,从中,计算了诸如电子概率密度和静电势能的状态函数,并计算出适当的半空间平衡平衡Plassmon激发波触发。半空间有限温度电子等离子体的当前模型揭示了以前的研究中不存在许多有趣的特征。该模型在未磁性的任意退化电子气体中考虑了单个电子及其集体实体之间详细的静电相互作用的量子等离子体激发的双重尺度特征。这些长度尺度的相互作用被指出会导致在气体密度模式下调节气体中定义明确的微型周期性密度条纹的形成,并导致在系统的物理jellium边界的前面引起电子晕。在边界前的一个新型有吸引力的Lennard-Jones样势能形成了与强掺杂的N型半导体以及金属表面相关的参数密度温度区域。后来的效果可以适当解释真空中平行金属板之间的卡西米尔 - 羽状力。
Current research presents an innovative model of half-space plasmon excitations for electron gas of arbitrary degeneracy in an ambient jellium-like positive background . The linearized Schrödinger-Poisson system is used to derive effective coupled pseudoforce and damped pseudoforce system of second-order differential equations from which the state functions such as the electron probability density and electrostatic potential energy are calculated and the appropriate half-space equilibrium plasmon excitation wave-functions are constructed. Current model of half-space finite temperature electron plasmon reveals many interesting features not present in previous studies. This model benefits a dual length scale character of quantum plasmon excitations taking into account the detailed electrostatic interactions between single electrons and their collective entity in an unmagnetized arbitrary degeneracy electron gas. The interaction of these length scales is remarked to lead to the formation of well defined miniature periodic density fringes in the gas which are modulated over the envelop density pattern and causes the presence of an electron halo in front of the physical jellium boundary of the system. A novel attractive Lennard-Jones-like potential energy forms in front of the boundary for parametric density-temperature region relevant to the strongly doped N-type semiconductors as well as metallic surfaces. The later effect may appropriately explain the Casimir-Polder-like forces between parallel metallic plates in vacuum.