论文标题
Si-Doped \ b {eta} -ga2o3电影中的杂质带传导
Impurity Band Conduction in Si-doped \b{eta}-Ga2O3 Films
论文作者
论文摘要
通过结合温度依赖性电阻率和HALL效应测量值，我们研究了使用金属有机蒸气相的同际（MOVPE）生长的Si掺杂\ b {eta} -GA2O3膜中的供体状态能。高磁场霍尔效应测量值（H = +/- 90 KOE）表现出t <150 K的非线性霍尔电阻，显示两波段传导。进一步的分析表明，在两个频段中，载体冻结特性产生了约33.7和〜45.6 meV的供体能量。前者与\ b {eta} -ga2O3中Si的供体能量一致，而后者则暗示了残留的供体状态，可能与DX中心有关。这项研究提供了对杂质带传导和使用高场磁转运测量值\ b {eta} -GA2O3中缺陷能量状态的关键见解。
By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped \b{eta}-Ga2O3 films grown using metal-organic vapor phase epitaxy (MOVPE). High magnetic field Hall effect measurements (H = +/-90 kOe) showed non-linear Hall resistance for T < 150 K revealing two-band conduction. Further analyses revealed carrier freeze-out characteristics in both bands yielding donor state energies of ~ 33.7 and ~ 45.6 meV. The former is consistent with the donor energy of Si in \b{eta}-Ga2O3 whereas the latter suggests a residual donor state, likely associated with a DX center. This study provides a critical insight into the impurity band conduction and the defect energy states in \b{eta}-Ga2O3 using high-field magnetotransport measurements.
