论文标题
新分层材料的外观：2D辣椒剂和弱范德华相互作用的挑战
Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions
论文作者
论文摘要
新材料在纳米技术中的应用开辟了新的观点并实现了突破性的创新。二维范德华材料和更具体的2D辣椒剂是一类有希望的新材料，等待其在半导体行业中使用。但是，依靠与行业兼容的制造过程的范德华材料的整合仍然是一个主要挑战。目前，这仅限于这些新材料在研究实验室环境中的应用。范德华材料的大面积和单晶增长是满足半导体行业所暗示的具有挑战性要求的最重要要求之一。这篇综述通过外交的生长过程有助于对范德华材料的整合以及更特定的2D硫代基因的整合。这可以进一步追求大区域，单晶和无缺陷的（Quasi）van der waals和异质结构对半导体行业的伟大世界的愿望。
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.
