论文标题
ADATOM诱导的外延硅中的脱位
Adatom-induced dislocation annihilation in epitaxial silicene
论文作者
论文摘要
在Zrb $ _2 $薄膜上自发形成的外延硅的条纹结构域结构的转化为单域，这是由硅单层吸附的吸附驱动的单域，用于研究错位如何在二维蜜糖结构中反应和最终在二维蜜蜂结构中反应。 SI沉积后域结构的演化的原位实时监测揭示了通过部分脱位的逐步反应将单域将单域成核成域结构的机制。成核之后，单域通过在其前沿的边缘位错的传播扩展。鉴定这种特定的无硅硅片的成核促销形成提供了有关如何在二维材料中治愈晶体学缺陷的见解。
The transformation of the stripe domain structure of spontaneously-formed epitaxial silicene on ZrB$_2$ thin film into a single-domain driven by the adsorption of a fraction of a monolayer of silicon was used to investigate how dislocations react and eventually annihilate in a two-dimensional honeycomb structure. The in-situ real time STM monitoring of the evolution of the domain structure after Si deposition revealed the mechanisms leading to the nucleation of a single-domain into a domain structure through a stepwise reaction of partial dislocations. After its nucleation, the single-domain extends by the propagation of edge dislocations at its frontiers. The identification of this particular nucleation-propagation formation of dislocation-free silicene sheet provides insights into how crystallographic defects can be healed in two-dimensional materials.
