论文标题
Weyl半学候选$ \ mathrm {co_2tige} $中的thz范围faraday旋转
THz range Faraday rotation in the Weyl Semimetal Candidate $\mathrm{Co_2TiGe}$
论文作者
论文摘要
$ \ mathrm {Co_2} $ Ferromagnetic Heusler Alloys家族由于其完全自旋的性质而引起了兴趣，使其非常适合在Spintronic设备中应用。最近，在这些系统中预测并确认了在费米水平附近的室温时间逆转的Weyl节点的存在。由于存在这些Weyl节点，这些系统具有非零动量空间浆果曲率，可以显着影响运输特性，例如异常霍尔效应。这些候选化合物之一是$ \ mathrm {co_2 ti ge} $。最近，$ \ mathrm {co_2 ti ge} $的高质量分子束外延增长了薄膜。在这项工作中，我们介绍了MBE种植的$ \ Mathrm {Co_2 ti ge} $ films的Thz-范围测量。我们测量了THZ-Range Faraday旋转，可以理解为对异常效应的量度。我们通过电子带结构的计算来补充这项工作，表明该材料中对异常效应的主要贡献源于材料的浆果曲率。我们的工作表明，这类Heusler材料对基于Weyl Smimetal的Spintronics显示了希望。
The $\mathrm{Co_2}$ family of ferromagnetic Heusler alloys have attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is $\mathrm{Co_2 Ti Ge}$. Recently, high quality molecular beam epitaxy-grown thin films of $\mathrm{Co_2 Ti Ge}$ have become available. In this work, we present THz-range measurement of MBE-grown $\mathrm{Co_2 Ti Ge}$ films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band structure calculations showing that the principal contribution to the anomalous Hall effect in the this material stems from the Berry curvature of the material. Our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.
