论文标题

有机狄拉克电子系统中磁阻的普遍行为

Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems

论文作者

Kobara, Ryotaro, Igarashi, Shin, Kawasugi, Yoshitaka, Doi, Ryusei, Naito, Toshio, Tamura, Masafumi, Kato, Reizo, Nishio, Yutaka, Kajita, Koji, Tajima, Naoya

论文摘要

有机无质量奶油电子系统(OMDES)$α$ - (bedt-ttf)$ _ 2 $ _ 2 $ i $ _3 $和$θ$ - (bedt-tttf)$ _ 2 $ _ 2 $ i $ _3 $,以及OMDES $α$ i $ i $ i $ i $ i $ i $ i $ i $ _3 $α$ - (BEDT-STF)$ _ 2 $ i $ _3 $,在静水压力下进行了研究。我们发现,在垂直于二维平面的低磁场下,平面磁场抗性的普遍行为。至于$α$ - (bedt-ttf)$ _ 2 $ i $ _3 $,使用温度,磁场及其方向的参数检查了普遍性。我们建议,即使对于$α$ - (bedt-ttf)$ _ 2 $ i $ _3 $在中等压力下,当热能超过间隙时,通用的磁性行为也是如此。

In-plane magnetoresistance for organic massless Dirac electron system (OMDES) $α$-(BEDT-TTF)$_2$I$_3$ and $θ$-(BEDT-TTF)$_2$I$_3$ in addition to possible candidates of the OMDES $α$-(BETS)$_2$I$_3$ and $α$-(BEDT-STF)$_2$I$_3$, was investigated under hydrostatic pressure. We have found the universal behavior of the in-plane magnetoresistance under a low magnetic field perpendicular to two-dimensional plane. As for $α$-(BEDT-TTF)$_2$I$_3$, the universality was examined with the parameters of temperature, magnetic field and its direction. We suggest that the universal magnetoresistance behavior is found even for the gapped state of $α$-(BEDT-TTF)$_2$I$_3$ under intermediate pressure, when the thermal energy exceeds the gap.

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