论文标题
在GASE和INSE晶体中拉曼散射中的共振和反抗能
Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
论文作者
论文摘要
在$ \ varepsilon $ gase和$γ$ -inse晶体中研究了对拉曼散射效率的温度影响。我们发现，在较大范围内的温度从5 K到350 K的允许变化，以达到共振条件和所研究材料的拉曼散射中的抗抗气行为。由于光条间隙的能量接近性，在GASE的1.96 eV激发下，在大约270 k处观察到拉曼散射的共振条件。在INSE的情况下，由于\ Mbox {所谓的} B转变的能量接近性，共振的拉曼光谱在相应的2.41 eV和2.54 eV激发下在相应的2.41 eV和2.54 eV激发下显而易见。有趣的是，观察到的两种材料的共振之后，在高温下比检测到的共振在更高的温度下明显的抗抗异种行为。可以用电子 - 音纸耦合和量子干扰来自布里渊区的不同点的贡献来解释声子强度的显着变化
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 K and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the \mbox{so-called} B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone
