论文标题
MXENES中图像势态引起的拓扑相变:理论研究
Topological Phase Transition Induced by Image Potential States in MXenes: A Theoretical Investigation
论文作者
论文摘要
MXENES是二维过渡金属碳化物和氮化物的家族,具有各种可调的物理和化学特性。它们在电子和储能设备中的多样性应用引发了对科学和技术的极大兴趣。 MXENES可以通过不同的表面终止功能化。某些O和F官能化的MXENES单层被预测为拓扑绝缘子(TIS)。但是,据报道的OH功能化mxenes TI很少,并且需要更详细地研究其电子结构。据透露,通过OH终止,MXENES的工作函数显着降低,图像电位(IP)状态移动到Fermi水平附近。这些IP状态的波函数在表面之外在空间上广泛。通过堆叠OH功能化的MXENE,可以通过多层的层间距离来调节IP状态的能量,因为相邻层之间波函数的重叠和杂交很重要。因此,这些堆叠层与IP状态进行交互并结合。在这里,根据第一原理计算,我们证明了二维拓扑琐事的OH功能化MXENES的堆叠,例如V $ _2 $ _2 $ hfc $ _2 $(OH)$ _ 2 $,可能会导致拓扑上的非琐事能量乐队。换句话说,v $ _2 $ hfc $ _2 $(oh)$ _ 2 $多层的拓扑属性可以通过层间距离进行调节。提出了涉及IP状态的能量频段反转。我们希望这些结果可以推动MXENES或其他低工作功能多层材料作为可控TI设备的未来应用。
MXenes, a family of two-dimensional transition metal carbides and nitrides, have various tunable physical and chemical properties. Their diverse prospective applications in electronics and energy storage devices have triggered great interests in science and technology. MXenes can be functionalized by different surface terminations. Some O and F functionalized MXenes monolayers have been predicted to be topological insulators (TIs). However, the reported OH functionalized MXenes TIs are very few and their electronic structures need to be investigated in more detail. It has been revealed that the work functions of MXenes are reduced significantly by OH termination and the image potential (IP) states move close to the Fermi level. The wave functions of these IP states are spatially extensive outside the surfaces. By stacking the OH-functionalized MXenes, the energies of the IP states can be modulated by the interlayer distances of multilayers, because the overlap and hybridization of the wave functions between the neighboring layers are significant. Therefore, these stacking layers are interacted and coupled with IP states. Here, based on first-principles calculations, we demonstrate that the stacking of two-dimensional topologically trivial OH-functionalized MXenes, such as V$_2$HfC$_2$(OH)$_2$, possibly gives rise to the topologically nontrivial energy bands. In other words, the topological properties of V$_2$HfC$_2$(OH)$_2$ multilayers can be modulated by its interlayer distance. An energy band inversion involving IP states is proposed. We expect that these results can advance the future application of MXenes or other low work function multilayer materials as controllable TI devices.