论文标题

无序轴突绝缘子的离域化过渡

Delocalization Transition of Disordered Axion Insulator

论文作者

Song, Zhi-Da, Lian, Biao, Queiroz, Raquel, Ilan, Roni, Bernevig, B. Andrei, Stern, Ady

论文摘要

轴突绝缘子是由反转对称保护的高阶拓扑绝缘子。我们表明,尊重反转对称性的猝灭障碍{\ it平均},轴突绝缘子的拓扑保持稳健,并且在从轴轴绝缘子到微不足道的绝缘子的过渡时不可避免地将状态定位化的中间金属相不可避免地不可避免。我们从一般参数,经典的渗滤理论以及对3D量子网络模型的数值研究中得出了这一结论,该模型通过层结构模拟了无序的轴突绝缘子。我们发现在离域转换附近的定位长度临界指数为$ν= 1.42 \ pm 0.12 $。我们进一步表明,这种离域转变即使是平均反演对称性的弱破裂,直到临界强度也是稳定的。我们还将量子网络模型定量地映射到有效的哈密顿量,并发现其低能K $ \ cdot $ p扩展。

The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find the localization length critical exponent near the delocalization transition to be $ν=1.42\pm 0.12$. We further show that this delocalization transition is stable even to weak breaking of the average inversion symmetry, up to a critical strength. We also quantitatively map our quantum network model to an effective Hamiltonian and we find its low energy k$\cdot$p expansion.

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