论文标题
逼真的二维无定形拓扑制造剂的结构和电子特性
Structural and electronic properties of realistic two-dimensional amorphous topological insulators
论文作者
论文摘要
我们研究了二维无定形二茶结构的结构和电子光谱特性，并表明这些系统是拓扑绝缘子。我们采用无定形几何形状的现实建模以及用于电子结构计算的密度功能理论。我们研究了整个非正式过程中的系统拓扑特性，发现拓扑阶段的鲁棒性与自旋轨道耦合强度和原始拓扑间隙的大小相关。使用递归的非平衡性绿色功能，我们研究了纳米管设备的电子传输特性，其长度与实验合成的材料相当。我们在拓扑间隙中发现了$ 2E^2/h $电导高原，并且在琐碎绝缘体阶段的安德森本地化发作。
We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a $2e^2/h$ conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase.
