论文标题
用HGTE多量子井激光二极管在GAAS RESTSTRAHLEN频段中激光的可行性
Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes
论文作者
论文摘要
半导体激光器在20-50 $ $ m M波长范围内的操作受到频带间激光二极管中强的非辐射重组的阻碍，而基于GAAS的量子级联级联结构中的强烈非辐射范围和强烈的晶格吸收。在这里，我们提出了一个基于多个HGTE量子井的电泵激光二极管，其带状结构设计用于螺旋钻重组抑制。使用量子井，螺旋井重组和加热效果的载体漂移和扩散，电子和孔捕获的综合模型会计，我们显示了在高达90 k的温度下激光为$λ= 26 ... 30 $ $ $ m $ m的可行性。脉搏的输出功率可达到8 mW的脉冲脉冲，可达到8 mW。
Operation of semiconductor lasers in the 20--50 $μ$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at $λ= 26...30$ $μ$m at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.
