论文标题
Ti底层厚度对TBFE薄膜的磁各向异性的影响
Effect of Ti underlayer thickness on the magnetic anisotropy of TbFe thin films
论文作者
论文摘要
在这项研究中，我们解决了Ti卧式厚度（UL：0-40 nm）对TBFE薄膜的结构，磁性和显微镜特性的影响。结构分析证实了在Ti和TBFE层的界面上的混合，并增加了UL厚度。平面外（OOP）的胁迫（HC）和饱和场（HS）随着UL厚度的增加而逐渐增加，无论界面混合如何。对于UL = 10 nm，域对比度和OOP弹簧场强度得到了增强，这可能是由于D-D杂交的程度在界面粗糙度的影响下占主导地位。而对于UL = 20和40 nm，界面粗糙度的程度主导了杂交效应，因此，流浪场恶化。通过放置20 nm的UL，HC增加了近6倍，是Bare TBFE系统的近6倍。因此，我们观察到一个具有高OOP HC的状态以及在样品中共存的几乎为零的OOP杂散场。大面积的磁化反转研究揭示了所有薄膜中的域成核，然后在所有薄膜中进行域壁运动。通过改变ti ul的厚度来调整磁性特性的想法可能在旋转的应用中有用。
In this study, we address the impact of Ti underlayer thickness (UL: 0-40 nm) on the structural, magnetic, and microscopic properties of TbFe thin films. The structural analysis confirmed the intermixing at interfaces of the Ti and TbFe layer with the increment of UL thicknesses. Out-of-plane (OOP) coercivity (Hc), and saturation field (Hs) gradually increased with an increase in UL thickness regardless of interface mixing. For UL = 10 nm, the domain contrast and OOP stray field strength were enhanced, which may be due to the extent of d-d hybridization dominated over the influence of interfacial roughness. While for UL = 20, and 40 nm, the extent of interfacial roughness dominated the hybridization effects and as a result, stray fields deteriorated. By placing UL of 20 nm, Hc increased by nearly 6 times more than the bare TbFe system. So, we observe a state with high OOP Hc combined with nearly zero OOP stray fields that are found to co-exist in the sample. The magnetization reversal studies on a large area reveal domain nucleation followed by domain-wall motion in all the films. The idea of tuning magnetic properties by varying thicknesses of Ti UL may useful in spintronics applications.
