论文标题
由于随机接口电荷陷阱而导致的硅量子门的可变性和忠诚度限制
Variability and Fidelity Limits of Silicon Quantum Gates Due to Random Interface Charge Traps
论文作者
论文摘要
硅提供了一个有吸引力的材料平台，用于实现量子计算的硬件。在这项研究中，开发了一种微观随机仿真方法，以模拟硅金属氧化物 - 气管导体（MOS）量子门中随机界面电荷陷阱的影响。统计结果表明，通过在同位素纯化的硅中使用快速的两倍栅极，基于两倍的硅的量子门具有忠诚度> 98％，而最先进的MOS接口质量的概率为75％。通过使用复合门脉冲，以75％的概率可以将保真度进一步提高到> 99.5％。但是，量子门设备之间的变化很大程度上是由于每个设备的陷阱数量少。结果突出了由于随机电荷陷阱而引起的可变性考虑因素的重要性，并有可能提高基于硅的量子计算中的保真度。
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon metal-oxide-semiconductor (MOS) quantum gates. The statistical results show that by using a fast two-qubit gate in isotopically purified silicon, the two-qubit silicon-based quantum gates have the fidelity >98% with a probability of 75% for the state-of-the-art MOS interface quality. By using a composite gate pulse, the fidelity can be further improved to >99.5% with the 75% probability. The variations between the quantum gate devices, however, are largely due to the small number of traps per device. The results highlight the importance of variability consideration due to random charge traps and potential to improve fidelity in silicon-based quantum computing.
